High Voltage Diode
Key Parameters
VRRM = 6 000 V
IFAVm = 3 201 A
IFSM = 40 000 A
VTO = 0.944 V
rT = 0.166 mΩ
Properties
· Industry standard housing· Suitable for parallel operation
· High operating temperature
· Low forward voltage drop
Applications
· Rectifier bridges
